Silicon waveguide devices in integrated photonics
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United States of America Patent
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Jan 9, 2018
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app pub date -
Sep 30, 2016
filing date -
Sep 30, 2016
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Abstract
The present disclosure relates to semiconductor structures and, more particularly, to silicon waveguide devices in integrated photonics and methods of manufacture. The integrated photonics structure includes: a localized region of negative thermal expansion (NTE) coefficient material formed within a trench; at least one photonics or CMOS component contacting with the negative thermal expansion (NTE) coefficient material; and cladding material formed above the at least one photonics or CMOS component.
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