Semiconductor sensor having a suspended structure and method of forming a semiconductor sensor having a suspended structure
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United States of America Patent
Stats
-
Jan 9, 2018
Issued Date -
N/A
app pub date -
Nov 20, 2014
filing date -
Dec 6, 2013
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A semiconductor gas sensor device includes a substrate, a conductive layer supported by the substrate, a non-suitable seed layer, and a porous gas sensing layer portion. The non-suitable seed layer is formed from a first material and includes a first support portion supported by the conductive layer, a second support portion supported by the conductive layer, and a suspended seed portion extending from the first support portion to the second support portion and suspended above the conductive layer. The porous gas sensing layer portion is formed from a second material and is supported directly by the non-suitable seed layer in electrical communication with the conductive layer. The first material and the second material form a non-suitable pair of materials.
First Claim
Other Claims data not available
Family
International Classification(s)
- 2014 Application Filing Year
- G01N Class
- 10055 Applications Filed
- 7887 Patents Issued To-Date
- 78.44 % Issued To-Date
Cited Art Landscape
Patent Citation Ranking
- 4 Citation Count
- G01N Class
- 40.30 % this patent is cited more than
- 7 Age
Maintenance Fees
| Fee | Large entity fee | small entity fee | micro entity fee | due date |
|---|---|---|---|---|
| 7.5 Year Payment | $3600.00 | $1800.00 | $900.00 | Jul 9, 2025 |
| 11.5 Year Payment | $7400.00 | $3700.00 | $1850.00 | Jul 9, 2029 |
