Semiconductor sensor having a suspended structure and method of forming a semiconductor sensor having a suspended structure
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United States of America Patent
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Jan 9, 2018
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N/A
app pub date -
Nov 20, 2014
filing date -
Dec 6, 2013
priority date (Note) -
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Abstract
A semiconductor gas sensor device includes a substrate, a conductive layer supported by the substrate, a non-suitable seed layer, and a porous gas sensing layer portion. The non-suitable seed layer is formed from a first material and includes a first support portion supported by the conductive layer, a second support portion supported by the conductive layer, and a suspended seed portion extending from the first support portion to the second support portion and suspended above the conductive layer. The porous gas sensing layer portion is formed from a second material and is supported directly by the non-suitable seed layer in electrical communication with the conductive layer. The first material and the second material form a non-suitable pair of materials.
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