Metrology apparatus for a semiconductor pattern, metrology system including the same and metrology method using the same
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United States of America Patent
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Jan 9, 2018
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Nov 24, 2015
filing date -
Aug 7, 2015
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Abstract
A metrology method includes obtaining a pattern reflection light reflected from an object by irradiating a first divided light, which is generated by reflecting a polarized light, to the object; obtaining a phase-controlled mirror reflection light reflected from a reflector by irradiating a second divided light, which is generated by transmitting the polarized light, to the reflector; and obtaining a pattern of the object based on an interference signal between the pattern reflection light and the mirror reflection light.
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