Metal oxide semiconductor layer forming composition, and method for producing metal oxide semiconductor layer using same

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9859442
SERIAL NO

15325842

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

The invention provides a metal oxide semiconductor layer forming composition containing a solvent represented by formula [1]:

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddress
NISSAN CHEMICAL INDUSTRIES LTDTOKYO JAPAN TOKYO METROPOLIS

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Maeda, Shinichi Funabashi, JP 76 438

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation

Maintenance Fees

Fee Large entity fee small entity fee micro entity fee due date
7.5 Year Payment $3600.00 $1800.00 $900.00 Jul 2, 2025
11.5 Year Payment $7400.00 $3700.00 $1850.00 Jul 2, 2029
Fee Large entity fee small entity fee micro entity fee
Surcharge - 7.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge - 11.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge after expiration - Late payment is unavoidable $700.00 $350.00 $175.00
Surcharge after expiration - Late payment is unintentional $1,640.00 $820.00 $410.00