Semiconductor device comprising a transistor cell including a source contact in a trench, method for manufacturing the semiconductor device and integrated circuit
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jan 2, 2018
Issued Date -
N/A
app pub date -
Aug 11, 2016
filing date -
Aug 14, 2015
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A semiconductor device is provided including a transistor cell in a semiconductor substrate having a first main surface. The transistor cell includes a gate electrode in a gate trench in the first main surface adjacent to a body region. A longitudinal axis of the gate trench extends in a first direction parallel to the first main surface. A source region, a body region and a drain region are disposed along the first direction. A source contact comprises a first source contact portion and a second source contact portion. The second source contact portion is disposed at a second main surface of the semiconductor substrate. The first source contact portion includes a source conductive material in direct contact with the source region and a portion of the semiconductor substrate arranged between the source conductive material and the second source contact portion.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully