FinFET semiconductor device having fins with stronger structural strength

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United States of America Patent

PATENT NO 9859276
SERIAL NO

15292406

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Abstract

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A semiconductor device including at least one fin disposed on a surface of a semiconductor substrate is provided. The fin includes a main portion extending along a first direction, and at least one secondary portion extending outward from the main portion along a second direction not collinear with the first direction.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTDNO 8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78
NATIONAL CHIAO-TUNG UNIVERSITY1001 UNIVERSITY ROAD HSINCHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chien, Chao-Hsin Hsinchu, TW 18 39
Chou, Chen-Han Hsinchu, TW 10 22
Chung, Cheng-Ting Hsinchu, TW 77 276
Pan, Samuel C Hsinchu, TW 76 598

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