Method for providing a multilayer AFM layer in a read sensor
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United States of America Patent
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Jan 2, 2018
Issued Date -
N/A
app pub date -
Dec 1, 2015
filing date -
Dec 1, 2015
priority date (Note) -
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status (Latency Note)
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Abstract
A method provides a read sensor stack including an antiferromagnetic (AFM) layer, a pinned layer on the AFM layer, a free layer, and a nonmagnetic layer between the free and pinned layers. Providing the AFM layer includes depositing an AFM layer first portion at a first elevated temperature and at a rate of at least 0.1 Angstrom/second. This AFM layer first portion is annealed in-situ at at least one hundred degrees Celsius. An AFM sublayer is deposited at an elevated temperature and at a sublayer deposition rate of less than 0.1 Angstrom/second. The already-deposited portion of the AFM layer is annealed in-situ at at least one hundred degrees Celsius and less than five hundred degrees Celsius. The sublayer depositing and annealing steps may be repeated in order at least once to provide an AFM layer second portion that has multiple sublayers and is thinner than the AFM layer first portion.
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