Bulk diffusion crystal growth of nitride crystal
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United States of America Patent
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Jan 2, 2018
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Sep 4, 2014
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Sep 4, 2013
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Abstract
The present disclosure generally relates to systems and methods for growing group III-V nitride crystals. In particular the systems and methods include diffusing constituent species of the crystals through a porous body composed of the constituent species, where the species freely nucleate to grow large nitride crystals.
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