Crystal growth apparatus and manufacturing method of group III nitride crystal

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United States of America Patent

PATENT NO 9856575
SERIAL NO

14853133

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Abstract

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A crystal growth apparatus comprises a reaction vessel holding a melt mixture containing an alkali metal and a group III metal, a gas supplying apparatus supplying a nitrogen source gas to a vessel space exposed to the melt mixture inside the reaction vessel, a heating unit heating the melt mixture to a crystal growth temperature, and a support unit supporting a seed crystal of a group III nitride crystal inside the melt mixture.

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Patent Owner(s)

Patent OwnerAddress
SUMITOMO CHEMICAL COMPANY LIMITED27-1 SHINKAWA 2-CHOME CHUO-KU TOKYO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fuse, Akihiro Miyagi, JP 15 221
Iwata, Hirokazu Miyagi, JP 59 754
Sarayama, Seiji Miyagi, JP 54 542

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