Ground detecting apparatus and relay action detecting apparatus
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United States of America Patent
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Dec 26, 2017
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app pub date -
Aug 6, 2015
filing date -
Oct 9, 2014
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Abstract
A ground detecting apparatus at least includes a metal oxide semiconductor field effect transistor and a high voltage resistor. The metal oxide semiconductor field effect transistor is used to replace a photo-coupler for switching. The high voltage resistor is used for safety isolation. A relay action detecting apparatus at least includes a metal oxide semiconductor field effect transistor and a high voltage resistor. The metal oxide semiconductor field effect transistor is used to replace a photo-coupler for switching. The high voltage resistor is used for safety isolation.
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