Magnetoresistance effect element
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United States of America Patent
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Dec 26, 2017
Grant Date -
Dec 29, 2016
app pub date -
Sep 7, 2016
filing date -
May 22, 2015
priority date (Note) -
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Abstract
A magnetoresistance effect element of the present invention includes: a barrier layer; a reference layer formed on one surface of the barrier layer; a free layer formed on the other surface of the barrier layer; and a pinned layer placed on the opposite side of the reference layer from the barrier layer. The pinned layer includes a structure obtained by stacking Ni, Co, Pt, Co, Ru, Co, Pt, Co, and Ni layers in this order.
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