High voltage device and manufacturing method thereof
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United States of America Patent
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Dec 26, 2017
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app pub date -
Apr 18, 2017
filing date -
Jan 9, 2017
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Abstract
The present invention provides a high voltage device and manufacturing method thereof. The high voltage device includes: a semiconductor substrate, an isolation structure, a gate, a body region, a well, a source, a drain and a lightly doped diffusion (LDD) region. The isolation structure is formed on an upper surface of the semiconductor substrate, for defining a device region, The LDD region is formed on the well in the device region. In a lateral direction, the LDD region is located between the gate and the drain, and the LDD region is not in direct contact with the drain.
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