Semiconductor device, electrical device system, and method of producing semiconductor device
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United States of America Patent
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Dec 26, 2017
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N/A
app pub date -
Oct 3, 2016
filing date -
Feb 13, 2013
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Abstract
A semiconductor device includes a first semiconductor layer; an insulation member layer formed on the first semiconductor layer; a transistor disposed in an upper portion of the insulation member layer; a first interlayer insulation film covering the transistor; a layered member including a wiring layer formed on the first interlayer insulation film and a second interlayer insulation film; and a first penetrating electrode penetrating through the insulation member layer, the first interlayer insulation film, and the layered member. The first penetrating electrode is electrically connected only to the first semiconductor layer.
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