Method of manufacturing semiconductor device
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United States of America Patent
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Dec 26, 2017
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app pub date -
Mar 13, 2017
filing date -
Mar 28, 2016
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Abstract
A technique of reducing the manufacturing cost of a semiconductor device is provided, There is provided a method of manufacturing a semiconductor device comprising an ion implantation process of implanting at least one of magnesium and beryllium by ion implantation into a first semiconductor layer that is mainly formed from a group III nitride; and a heating process of heating the first semiconductor layer in an atmosphere that includes an anneal gas of at least one of magnesium and beryllium, after the ion implantation process.
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