Ion beam processing method and ion beam processing apparatus
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United States of America Patent
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Dec 26, 2017
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Jun 26, 2015
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Mar 8, 2013
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Abstract
An ion beam etching method includes applying a positive voltage for extracting ions into a vacuum container to a first electrode, under a first condition where irradiation of a substrate with an ion beam is blocked off by a shutter, generating plasma in an internal space under the first condition, forming the ion beam by forming, under the first condition, a second condition where a positive voltage is applied to the first electrode and a negative voltage is applied to a second electrode, and moving the shutter and processing the substrate by irradiating the substrate with the ion beam.
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