Method for the fabrication of electron field emission devices including carbon nanotube field electron emisson devices

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United States of America Patent

PATENT NO 9852870
SERIAL NO

13113378

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Abstract

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The present invention is directed to a method for the fabrication of electron field emitter devices, including carbon nanotube (CNT) field emission devices. The method of the present invention involves depositing one or more electrically conductive thin-film layers onto a electrically conductive substrate and performing lithography and etching on these thin film layers to pattern them into the desired shapes. The top-most layer may be of a material type that acts as a catalyst for the growth of single- or multiple-walled carbon nanotubes (CNTs). Subsequently, the substrate is etched to form a high-aspect ratio post or pillar structure onto which the previously patterned thin film layers are positioned. Carbon nanotubes may be grown on the catalyst material layer. The present invention also described methods by which the individual field emission devices may be singulated into individual die from a substrate.

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Patent Owner(s)

Patent OwnerAddress
CORPORATION FOR NATIONAL RESEARCH INITIATIVES1895 PRESTON WHITE DRIVE SUITE 100 RESTON VA 20191-5434

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Huff, Michael Oakton, US 9 51
Oh, Lance Columbia, US 3 24
Ozgur, Mehmet Reston, US 22 616
Pedersen, Michael Ashton, US 85 1006
Sunal, Paul Arlington, US 5 32

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