Phase change memory element

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United States of America Patent

PATENT NO 9847479
SERIAL NO

15655134

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Abstract

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A phase-change memory element is provided. The phase-change memory element may include an electrode; a phase-change material that contacts the electrode; a first conductor that contacts the phase-change material; and a second conductor that contacts the phase-change material. The second conductor may be electrically connected to the first conductor only through the phase-change material, and each of the first and second conductors may be electrically connected to the electrode only through the phase-change material.

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Patent Owner(s)

Patent OwnerAddress
GULA CONSULTING LIMITED LIABILITY COMPANY160 GREENTREE DRIVE SUITE 101 DOVER DE 19904

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Frederick T Hsinchu, TW 38 495
Tsai, Ming-Jinn Hsinchu, TW 21 332

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