Armature-clad MRAM device
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United States of America Patent
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Dec 19, 2017
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N/A
app pub date -
Feb 14, 2017
filing date -
Mar 20, 2014
priority date (Note) -
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Abstract
A magnetoresistive memory cell includes a magnetoresistive tunnel junction stack and a dielectric encapsulation layer covering sidewall portions of the stack and being opened over a top of the stack. A conductor is formed in contact with a top portion of the stack and covering the encapsulation layer. A magnetic liner encapsulates the conductor and is gapped apart from the encapsulating layer covering the sidewall portions of the stack.
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