Biasing the substrate region of an MOS transistor
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United States of America Patent
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Dec 19, 2017
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app pub date -
Mar 20, 2017
filing date -
Sep 19, 2016
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Abstract
An integrated electronic device is supported by a substrate of a silicon on insulator type. At least one transistor is formed in and on a semiconductor film of the substrate. The transistor includes a drain region and a source region of a first conductivity type and a substrate (body) region of a second conductivity type lying under a gate region. An extension region laterally continues the substrate (body) region beyond the source and drain regions and borders, in contact with, the source region through a border region having the first conductivity type. This supports formation of an electrical connection of the source region and the substrate (body) region.
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