Buried etch stop layer for damascene bit line formation
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United States of America Patent
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Dec 19, 2017
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N/A
app pub date -
Nov 5, 2014
filing date -
Nov 5, 2014
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Abstract
A stack of layers is formed that includes first, second, and third dielectric layers. Contact plugs are then formed extending through the stack. Then a fourth dielectric layer is formed over the stack and contact plugs and trenches are formed through the fourth and third dielectric layers, extending to the second dielectric layer and exposing contact plugs.
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