Etching agent, etching method and etching agent preparation liquid
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United States of America Patent
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Dec 19, 2017
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app pub date -
Jul 3, 2014
filing date -
Jul 5, 2013
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Abstract
The object of the present invention is to provide: an etching agent for a titanium-based metal on a semiconductor substrate, which suppresses decomposition of hydrogen peroxide, has a long liquid service life, and has less need for controlling the concentration of hydrogen peroxide in the etching agent, even in the cases where the etching agent is used for a semiconductor substrate having the titanium-based metal and a metallic copper or a metal alloy; an etching method; and an etching agent preparation liquid for use by mixing with hydrogen peroxide.
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