Process for producing polycrystalline silicon

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United States of America Patent

PATENT NO 9845247
SERIAL NO

14907932

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Abstract

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Deposition on a sightglass in a reactor for CVD deposition of silicon is reduced by conducting a first purge gas stream substantially parallel to the reactor end surface of the sightglass, and conducting a second purge gas stream within the sightglass tube at an angle from the sightglass surface toward the interior of the reactor.

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Patent Owner(s)

Patent OwnerAddress
WACKER CHEMIE AG81671 MÜNCHEN

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Klose, Goeran Hirten, DE 3 1
Kraus, Heinz Zeilarn, DE 31 184
Salzeder, Franz Unterdietfurt, DE 2 1

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