Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applications
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United States of America Patent
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Dec 12, 2017
Issued Date -
N/A
app pub date -
Jul 20, 2015
filing date -
Jul 20, 2015
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A magnetic tunnel junction is disclosed wherein the reference layer and free layer each comprise one layer having a boron content from 25 to 50 atomic %, and an adjoining second layer with a boron content from 1 to 20 atomic %. One of the first and second layers in each of the free layer and reference layer contacts the tunnel barrier. Each boron containing layer has a thickness of 1 to 10 Angstroms and may include one or more B layers and one or more Co, Fe, CoFe, or CoFeB layers. As a result, migration of non-magnetic metals along crystalline boundaries to the tunnel barrier is prevented, and the MTJ has a low defect count of around 10 ppm while maintaining an acceptable TMR ratio following annealing to temperatures of about 400° C. The boron containing layers are selected from CoB, FeB, CoFeB and alloys thereof including CoFeNiB.
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International Classification(s)
- 2015 Application Filing Year
- H01L Class
- 25498 Applications Filed
- 22451 Patents Issued To-Date
- 88.06 % Issued To-Date
Cited Art Landscape
Patent Citation Ranking
- 3 Citation Count
- H01L Class
- 18.50 % this patent is cited more than
- 8 Age
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