Nitride semiconductor light emitting element
Number of patents in Portfolio can not be more than 2000
United States of America Patent
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Dec 12, 2017
Issued Date -
N/A
app pub date -
Jun 13, 2014
filing date -
Jun 13, 2014
priority date (Note) -
In Force
status (Latency Note)
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Abstract
Provided is a nitride semiconductor light emitting element in which deep-level light emission is suppressed, monochromaticity is improved, and light is emitted in a high-efficiency manner. A nitride semiconductor light emitting element having a light-emitting layer between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer, wherein the n-type nitride semiconductor layer contains AlnGa1-nN (0
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Family

- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
---|---|---|
USHIO DENKI KABUSHIKI KAISHA | TOKYO 100-8150 |
International Classification(s)

- 2014 Application Filing Year
- H01L Class
- 23828 Applications Filed
- 21803 Patents Issued To-Date
- 91.51 % Issued To-Date
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Miyoshi, Kohei | Himeji, JP | 41 | 394 |
# of filed Patents : 41 Total Citations : 394 | |||
Sugiyama, Toru | Himeji, JP | 138 | 1630 |
# of filed Patents : 138 Total Citations : 1630 | |||
Tsukihara, Masashi | Himeji, JP | 15 | 67 |
# of filed Patents : 15 Total Citations : 67 |
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- 0 Citation Count
- H01L Class
- 0 % this patent is cited more than
- 8 Age
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