System and method for mass-production of high-efficiency photovoltaic structures
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United States of America Patent
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Dec 12, 2017
Issued Date -
N/A
app pub date -
Dec 21, 2015
filing date -
Dec 21, 2015
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
One embodiment of the invention can provide a system for fabricating a photovoltaic structure. During fabrication, the system can form a sacrificial layer on a first side of a Si substrate; load the Si substrate into a chemical vapor deposition tool, with the sacrificial layer in contact with a wafer carrier; and form a first doped Si layer on a second side of the Si substrate. The system subsequently can remove the sacrificial layer; load the Si substrate into a chemical vapor deposition tool, with the first doped Si layer facing a wafer carrier; and form a second doped Si layer on the first side of the Si substrate.
First Claim
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International Classification(s)
- 2015 Application Filing Year
- H01L Class
- 25498 Applications Filed
- 22451 Patents Issued To-Date
- 88.06 % Issued To-Date
Cited Art Landscape
Patent Citation Ranking
- 0 Citation Count
- H01L Class
- 0 % this patent is cited more than
- 8 Age
Maintenance Fees
| Fee | Large entity fee | small entity fee | micro entity fee | due date |
|---|---|---|---|---|
| 7.5 Year Payment | $3600.00 | $1800.00 | $900.00 | Jun 12, 2025 |
| 11.5 Year Payment | $7400.00 | $3700.00 | $1850.00 | Jun 12, 2029 |
