Method for producing semiconductor device and semiconductor device
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United States of America Patent
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Dec 12, 2017
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N/A
app pub date -
Jan 10, 2017
filing date -
Jul 19, 2013
priority date (Note) -
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Abstract
A semiconductor device includes a pillar-shaped semiconductor layer and a first gate insulating film around the pillar-shaped semiconductor layer. A metal gate electrode is around the first gate insulating film and a metal gate line is connected to the gate electrode. A second gate insulating film is around a sidewall of an upper portion of the pillar-shaped semiconductor layer and a first contact made of a second metal surrounds the second gate insulating film. An upper portion of the first contact is electrically connected to an upper portion of the pillar-shaped semiconductor layer, and a third contact resides on the metal gate line. A lower portion of the third contact is made of the second metal.
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