Method of etching
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United States of America Patent
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Dec 12, 2017
Grant Date -
Oct 8, 2015
app pub date -
Apr 3, 2015
filing date -
Apr 4, 2014
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Abstract
A method is for etching a semiconductor substrate to reveal one or more features buried in the substrate. The method includes performing a first etch step using a plasma in which a bias power is applied to the substrate to produce an electrical bias, performing a second etch step without a bias power or with a bias power which is lower than the bias power applied during the first etch step, and alternately repeating the first and second etch steps.
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