Etching in the presence of alternating voltage profile and resulting porous structure

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United States of America Patent

PATENT NO 9840789
SERIAL NO

14159270

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A nanoporous metal structure is made by etching a metal alloy structure of two or more metals. Less than all of the metals are selectively removed (e.g., dissolved in solution) from the alloy in the presence of an alternating voltage profile, for example, a periodic voltage profile. The resulting nanoporous metal structure, having pore openings of about 20 nm to about 500 nm in diameter and a purity of at least about 70%, can be further treated to alter some or all of the structure, and/or to add, remove and/or modify properties thereof.

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Patent Owner(s)

Patent OwnerAddress
CITY UNIVERSITY OF HONG KONGTAT CHEE AVENUE KOWLOON HONG KONG

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Li, Yang Yang Kowloon, HK 28 107
Lu, Jian Kowloon, HK 220 1580
Zhang, Jie Kowloon, HK 1052 8750

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