Methods of preparing high density aligned silicon nanowire

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United States of America Patent

PATENT NO 9840774
SERIAL NO

14410014

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Abstract

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A simple, economical method of producing nanowire arrays is described. The method produces high density arrays having nanowires with diameters below 10 nm and does not require templating, catalysts, or surface pre/post-treatment. The disclosed methods and systems can be used, for example, for optoelectronic devices and photovoltaic cells, Li-ion batteries, chemical/bio sensors and transistors.

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Patent OwnerAddress
KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGY141 GAJEONG-RO YUSEONG-GU DAEJEON 34114

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hong, Sanghyun Malden, US 50 116
Joon, Jung Yung Boston, US 1 3
Lee, Sung-Goo Daejeon, KR 4 7
Yoo, Youngjae Daejeon, KR 2 3
Young, Jung Hyun Malden, US 1 3

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