Semiconductor light-emitting device
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United States of America Patent
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Dec 5, 2017
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N/A
app pub date -
Jan 23, 2017
filing date -
Nov 10, 2016
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Abstract
A semiconductor light-emitting device including a light-emitting layer, a first N-type waveguide layer and a plurality of semiconductor layers is provided. The light light-emitting layer has a first side and a second side opposite to the first side. The first N-type waveguide layer is disposed at the first side, and the semiconductor layers are disposed at the second side. The semiconductor layers include at least one P-type semiconductor layer and a plurality of N-type semiconductor layers, and a quantity of the N-type semiconductor layers is more than a quantity of the at least one P-type semiconductor layer.
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