Use of centrosymmetric Mott insulators in a resistive switched memory for storing data
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Dec 5, 2017
Issued Date -
N/A
app pub date -
Apr 10, 2013
filing date -
Apr 10, 2012
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A material belonging to the family of centrosymmetric Mott insulators is used as an active material in a resistively switched memory for storing data. The material is placed between two electrical electrodes, by virtue of which an electric field of a preset value is applied in order to form, by way of an electron avalanche effect, an elementary information cell that has at least two logic states.
First Claim
Family
International Classification(s)
- [Classification Symbol]
- [Patents Count]
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully