Post-etch encapsulation for a magnetoresistive device
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United States of America Patent
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Dec 5, 2017
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app pub date -
Oct 12, 2016
filing date -
Oct 12, 2016
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Abstract
Encapsulation of the magnetoresistive device after formation protects the sidewalls of the magnetoresistive device from degradation during subsequent deposition of interlayer dielectric material. The encapsulation also helps prevent short circuits between the top electrode of the magnetoresistive device and underlying layers within the magnetoresistive device. The encapsulation can be accomplished by depositing a layer of encapsulating material after device formation, where an etch back operation selectively removes the portions of the layer of encapsulating material other than the material on the sidewalls of the magnetoresistive device.
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