Oxide semiconductor target, oxide semiconductor film and method for producing same, and thin film transistor
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United States of America Patent
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Dec 5, 2017
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Apr 10, 2014
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Apr 12, 2013
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Abstract
The invention provides an oxide semiconductor target including an oxide sintered body including zinc, tin, oxygen, and aluminum in a content ratio of from 0.005% by mass to 0.2% by mass with respect to the total mass of the oxide sintered body, in which the content ratio of silicon to the total mass of the oxide sintered body is less than 0.03% by mass.
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