GaN transistors with polysilicon layers used for creating additional components
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United States of America Patent
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Dec 5, 2017
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N/A
app pub date -
Dec 4, 2015
filing date -
Jul 29, 2013
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Abstract
A GaN transistor with polysilicon layers for creating additional components for an integrated circuit and a method for manufacturing the same. The GaN device includes an EPI structure and an insulating material disposed over EPI structure. Furthermore, one or more polysilicon layers are disposed in the insulating material with the polysilicon layers having one or more n-type regions and p-type regions. The device further includes metal interconnects disposed on the insulating material and vias disposed in the insulating material layer that connect source and drain metals to the n-type and p-type regions of the polysilicon layer.
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