Substrate contact land for an MOS transistor in an SOI substrate, in particular an FDSOI substrate
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Dec 5, 2017
Issued Date -
N/A
app pub date -
Feb 11, 2016
filing date -
Jul 9, 2015
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A substrate contact land for a first MOS transistor is produced in and on an active zone of a substrate of silicon on insulator type using a second MOS transistor without any PN junction that is also provided in the active zone. A contact land on at least one of a source or drain region of the second MOS transistor forms the substrate contact land.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully