Method for producing semiconductor device and semiconductor device
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United States of America Patent
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Dec 5, 2017
Grant Date -
Nov 3, 2016
app pub date -
Jul 12, 2016
filing date -
Dec 2, 2011
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Abstract
A method for producing a semiconductor device includes forming a first fin-shaped semiconductor layer and a second fin-shaped semiconductor layer on a substrate using a sidewall formed around a dummy pattern on the substrate. A first insulating film is formed around the first fin-shaped semiconductor layer and the second fin-shaped semiconductor layer. A first pillar-shaped semiconductor layer is formed in an upper portion of the first fin-shaped semiconductor layer, and a second pillar-shaped semiconductor layer is formed in an upper portion of the second fin-shaped semiconductor layer.
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