Plasma etching method, plasma etching device, plasma processing method, and plasma processing device
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United States of America Patent
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Dec 5, 2017
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N/A
app pub date -
Feb 25, 2015
filing date -
Feb 28, 2014
priority date (Note) -
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Abstract
A plasma etching method includes a first step of attracting a substrate onto a monopolar electrostatic chuck in a first plasma, which is a plasma of a noble gas, and stopping generation of the first plasma after the attracting of the substrate, and a second step of etching the substrate in a second plasma, which is a plasma of a halogen-based etching gas, and stopping generation of the second plasma after the etching of the substrate. In the first step, the generation of the first plasma is stopped when a positive voltage is applied from the monopolar electrostatic chuck to the substrate. In the second step, the generation of the second plasma is stopped when a negative voltage is applied from the monopolar electrostatic chuck to the substrate.
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International Classification(s)
- H01J:ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- C23C:COATING METALLIC MATERIAL; COATING MATERIAL WITH M....
- C09K:MATERIALS FOR APPLICATIONS NOT OTHERWISE PROVIDED ....
- H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....
- C03C:CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREO....
- H02N:ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H05F:STATIC ELECTRICITY; NATURALLY-OCCURRING ELECTRICIT....
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