Ion implantation apparatus and method of controlling ion implantation apparatus
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United States of America Patent
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Dec 5, 2017
Grant Date -
Jul 30, 2015
app pub date -
Jan 26, 2015
filing date -
Jan 29, 2014
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Abstract
In an ion implantation apparatus, an interruption member interrupts an ion beam B in the middle of a beam line. A plasma shower device is provided at the downstream side of the interruption member in the beam line. A control unit causes the interruption member to interrupt the ion beam B during an ignition start period of the plasma shower device. The interruption member may be provided at the upstream side of at least one high-voltage electric field type electrode in the beam line. A gas supply unit may supply a source gas to the plasma shower device. The control unit may start the supply of the source gas from the gas supply unit after the ion beam B is interrupted by the interruption member.
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