High temperature flexural mode piezoelectric dynamic pressure sensor
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United States of America Patent
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Dec 5, 2017
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May 8, 2015
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May 8, 2015
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Abstract
A method for forming a pressure sensor includes forming a base of a sapphire material, the base including a cavity formed therein; forming a sapphire membrane on top of the base and over the cavity; forming a lower electrode on top of the membrane; forming a piezoelectric material layer on an upper surface of the lower electrode, the piezoelectric material layer being formed of aluminum nitride (AIN); and forming at least one upper electrode on an upper surface of the piezoelectric material layer.
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