Group III nitride bulk crystals and fabrication method
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United States of America Patent
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Dec 5, 2017
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app pub date -
Jan 16, 2015
filing date -
Apr 7, 2006
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Abstract
Bulk crystal of group III nitride having thickness greater than 1 mm with improved crystal quality, reduced lattice bowing and/or reduced crack density and methods of making. Bulk crystal has a seed crystal, a first crystalline portion grown on the first side of the seed crystal and a second crystalline portion grown on the second side of the seed crystal. Either or both crystalline portions have an electron concentration and/or an oxygen concentration similar to the seed crystal.
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