Method of high growth rate deposition for group III/V materials
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United States of America Patent
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Dec 5, 2017
Issued Date -
N/A
app pub date -
Oct 13, 2010
filing date -
Oct 14, 2009
priority date (Note) -
In Force
status (Latency Note)
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Abstract
Embodiments of the invention generally relate processes for epitaxial growing Group III/V materials at high growth rates, such as about 30 μm/hr or greater, for example, about 40 μm/hr, about 50 μm/hr, about 55 μm/hr, about 60 μm/hr, or greater. The deposited Group III/V materials or films may be utilized in solar, semiconductor, or other electronic device applications. In some embodiments, the Group III/V materials may be formed or grown on a sacrificial layer disposed on or over the support substrate during a vapor deposition process. Subsequently, the Group III/V materials may be removed from the support substrate during an epitaxial lift off (ELO) process. The Group III/V materials are thin films of epitaxially grown layers which contain gallium arsenide, gallium aluminum arsenide, gallium indium arsenide, gallium indium arsenide nitride, gallium aluminum indium phosphide, phosphides thereof, nitrides thereof, derivatives thereof, alloys thereof, or combinations thereof.
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Patent Citation Ranking
- 2 Citation Count
- H01L Class
- 18.50 % this patent is cited more than
- 8 Age
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