Method for manufacturing monocrystalline graphene
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United States of America Patent
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Dec 5, 2017
Issued Date -
N/A
app pub date -
Dec 26, 2014
filing date -
Dec 30, 2013
priority date (Note) -
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status (Latency Note)
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Abstract
The present invention provides a method for manufacturing a monocrystalline graphene layer, comprising the steps of: forming polycrystalline graphene on a substrate by using a hydrocarbon gas to grow a graphene layer aligned on a wafer-scale insulator substrate in one direction like a monocrystal; forming a catalyst on the polycrystalline graphene; and recrystallizing the polycrystalline graphene to monocrystalline graphene by heat-treating the polycrystalline graphene and the catalyst.
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International Classification(s)
- 2014 Application Filing Year
- C23C Class
- 2649 Applications Filed
- 2034 Patents Issued To-Date
- 76.79 % Issued To-Date
Cited Art Landscape
Patent Citation Ranking
- 0 Citation Count
- C23C Class
- 0 % this patent is cited more than
- 8 Age
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|---|---|---|---|---|
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