Cleaning fluid for semiconductor, and cleaning method using the same
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United States of America Patent
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Dec 5, 2017
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app pub date -
Jul 8, 2013
filing date -
Jul 19, 2012
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Abstract
There is provided a cleaning fluid that effectively removes metal impurities and the like existing on a portion through which a chemical solution for lithography passes, before causing the chemical solution to pass through a semiconductor manufacturing equipment in a lithography process, in order to prevent defects caused by the metal impurities and the like found on a semiconductor substrate after forming a resist pattern or after processing a semiconductor substrate in a process for manufacturing semiconductor device. A cleaning fluid to clean a portion through which a chemical solution for lithography passes in a semiconductor manufacturing equipment used in a lithography process for manufacturing semiconductors, including: an inorganic acid; water; and a hydrophilic organic solvent. In the cleaning fluid, the concentration of the inorganic acid is preferably 0.0001% by mass to 60% by mass based on a total mass of the cleaning fluid.
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