Half bridge driver circuits
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United States of America Patent
Stats
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Nov 28, 2017
Issued Date -
N/A
app pub date -
Feb 22, 2017
filing date -
Feb 22, 2016
priority date (Note) -
In Force
status (Latency Note)
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Abstract
A half bridge GaN circuit is disclosed. The circuit includes a low side circuit, which has a low side switch, a low side switch driver configured to drive the low side switch, a first level shift circuit configured to receive a first level shift signal, and a second level shift circuit configured to generate a second level shift signal. The half bridge GaN circuit also includes a high side circuit, which has a high side switch configured to be selectively conductive according to a voltage level of a received high side switch signal, and a high side switch driver configured to generate the high side switch signal in response to the level shift signals. A transition in the voltage of the high side switch signal causes the high side switch driver to prevent additional transitions of the voltage level of the high side switch signal for a period of time.

First Claim
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- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
---|---|---|
NAVITAS SEMICONDUCTOR LIMITED | 22 FITZWILLIAM SQUARE SOUTH SAINT PETER'S DUBLIN D02 FH68 |
International Classification(s)
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Giandalia, Marco | El Segundo, US | 28 | 321 |
Kinzer, Daniel Marvin | El Segundo, US | 31 | 368 |
Ribarich, Thomas | Laguna Beach, US | 29 | 338 |
Sharma, Santosh | Laguna Nigel, US | 93 | 1447 |
Zhang, Ju | Monterey Park, US | 48 | 320 |
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