Two-terminal reversibly switchable memory device

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United States of America Patent

PATENT NO 9831425
SERIAL NO

14844805

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Abstract

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A memory using mixed valence conductive oxides is disclosed. The memory includes a mixed valence conductive oxide that is less conductive in its oxygen deficient state and a mixed electronic ionic conductor that is an electrolyte to oxygen and promotes an electric field effective to cause oxygen ionic motion.

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Patent Owner(s)

Patent OwnerAddress
HEFEI RELIANCE MEMORY LIMITEDHEFEI

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chevallier, Christophe J Palo Alto, US 246 8058
Kinney, Wayne Emmett, US 100 3920
Lambertson, Roy Los Altos, US 22 722
Rinerson, Darrell Cupertino, US 110 5317
Sanchez,, Jr John E Palo Alto, US 12 98
Schloss, Lawrence Palo Alto, US 50 1656
Swab, Philip Santa Rosa, US 16 188
Ward, Edmond Monte Sereno, US 23 734

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