Method to induce strain in 3-D microfabricated structures
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United States of America Patent
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Nov 28, 2017
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N/A
app pub date -
Dec 18, 2015
filing date -
Jul 29, 2013
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Abstract
Methods and structures for forming strained-channel finFETs are described. Fin structures for finFETs may be formed in two epitaxial layers that are grown over a bulk substrate. A first thin epitaxial layer may be cut and used to impart strain to an adjacent channel region of the finFET via elastic relaxation. The structures exhibit a preferred design range for increasing induced strain and uniformity of the strain over the fin height.
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