Process for forming a short channel trench MOSFET and device formed thereby
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United States of America Patent
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Nov 28, 2017
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app pub date -
Nov 10, 2014
filing date -
Feb 23, 2006
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Abstract
A process for forming a short channel trench MOSFET. The process includes forming a first implant at the bottom of a trench that is formed in the body of the trench MOSFET and forming a second or angled implant that is tilted in its orientation and directed perpendicular to the trench that is formed in the body of the trench MOSFET. The second implant is adjusted so that it does not reach the bottom of the trench. In one embodiment the angled implant is n-type material.
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