Semiconductor device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9831335
SERIAL NO

15514615

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Provided is a semiconductor apparatus includes: a gate electrode disposed inside a trench and opposedly facing a p type base region with a gate insulating film interposed therebetween on a portion of a side wall; a shield electrode disposed inside the trench and positioned between the gate electrode and a bottom of the trench; an electric insulating region disposed inside the trench, the electric insulating region expanding between the gate electrode and the shield electrode, and further expanding along the side wall and the bottom of the trench so as to separate the shield electrode from the side wall and the bottom; a source electrode electrically connected to an n+ type source region and the shield electrode, wherein the shield electrode has a high resistance region positioned on an n+ drain region side, and a low resistance region positioned on a gate electrode side.

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Patent Owner(s)

Patent OwnerAddress
SHINDENGEN ELECTRIC MANUFACTURING CO LTDTOKYO 100-0004

International Classification(s)

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  • 2015 Application Filing Year
  • H01L Class
  • 25498 Applications Filed
  • 22451 Patents Issued To-Date
  • 88.06 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances20152016201720182019202020212022202320240255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Akimoto, Toshitaka Saitama, JP 3 13
Anazawa, Takeo Saitama, JP 2 9
Kishi, Masato Saitama, JP 12 26
Takemori, Toshiyuki Saitama, JP 16 250
Watanabe, Yuji Saitama, JP 196 1829

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  • H01L Class
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Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges26979357140748325312788503629173801 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +050010001500200025003000350040004500500055006000650070007500800085009000950010000

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