High electron mobility transistor (HEMT) and a method of forming the same
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United States of America Patent
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Nov 28, 2017
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Jun 21, 2016
filing date -
Jun 22, 2015
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Abstract
A high electron mobility transistor (HEMT) made of nitride semiconductor materials, and a method to form the HEMT are disclosed. The HEMT includes a channel layer made of GaN, a barrier layer made of one of AlGaN, InAlN, and InAlGaN on the GaN channel layer, a cap layer made of n-type GaN on the barrier layer, and an insulating layer on the cap layer. The insulating layer has an opening into which the gate is formed. The cap layer has a region in the opening that has a thickness smaller than a thickness of portions of the cap layer that are outside of such region. The outside portions have a thickness that is preferably 5 nm at most.
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