Semiconductor devices with field plates
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United States of America Patent
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Nov 28, 2017
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app pub date -
Jun 14, 2016
filing date -
Aug 28, 2009
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Abstract
A III-N device is described with a III-N material layer, an insulator layer on a surface of the III-N material layer, an etch stop layer on an opposite side of the insulator layer from the III-N material layer, and an electrode defining layer on an opposite side of the etch stop layer from the insulator layer. A recess is formed in the electrode defining layer. An electrode is formed in the recess. The insulator can have a precisely controlled thickness, particularly between the electrode and III-N material layer.
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